l Fast Switching l Low ON Resistance(Rdson≤1.1Ω) l Low Gate Charge (Typical Data: 57.9nC) l Low Reverse transfer capacitances(Typical: 11.3pF) l 100% Single Pulse avalan.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CS9N90F A9RD-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various .

CS9N90FA9RD

CS9N90FA9D

CS9N90AKRD-G

CS9N90ANHD

CS9N20A3R

CS9N20A4R

CS9N20A8R

CS9N20FA9R

CS90-E2GA152MYNS

CS9000

CS9012

CS902-A-R

CS90N03A3